Recent GaN Technology Improvements
Key Takeaways
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GaN is a crystalline semiconductor capable of handling higher voltages.
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GaN devices have faster switching speeds, high thermal conductivity, lower on-state resistance, and high breakdown strength.
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GaN technology enables high power density and smaller magnetics.
GaN devices are regularly used in some converters and drive applications
GaN and Sic are the two wide-bandgap semiconductors that have revolutionized conventional power electronic technology. Gallium Nitride (GaN) technology is what makes the quick charging of our mobile devices possible.
GaN is a crystalline semiconductor capable of handling high voltage. The current flow through GaN material is faster than silicon semiconductors, resulting in faster processing speeds. In this article, we will explore this material and how GaN technology is transforming the industry.
Key Properties of GaN
Several wideband gap high-efficiency power transistors and integrated circuits are fabricated using GaN material. In these devices, a two- dimensional electron gas (2DEG) is created due to the strain experienced at the interface of GaN crystal and AlGaN. When the device is subjected to an electric field, the 2DEG aids in establishing high electron mobility.
In unstrained GaN, the electron mobility is around 1000 cm2/ Vs, which increases to 2000 cm2/ Vs in the 2DEG region. It is the high mobility in GaN material that offers GaN devices faster switching speeds, high thermal conductivity, lower on-state resistance, and high breakdown strength.
GaN Technology
GaN finds applications in consumer electronics, data centers, industries, automotive, and renewable energy systems. GaN semiconductor devices are more efficient when converting power to electricity than silicon and germanium semiconductors. The reduction in size and portability offered by GaN has made it a favorite in the semiconductor field.
GaN technology is applied to the production of semiconductor power devices, RF components, and light-emitting diodes (LED), to name a few. The need for a thermal management system is less complex in GaN technology devices, as they rarely overheat.
GaN technology is at the forefront of developing even more powerful semiconductor devices with comparatively fewer losses and higher efficiency.
GaN vs. SiC
Parameter |
GaN |
SiC |
Band-gap |
3.39 eV |
3.26 eV |
Electron mobility |
900-2000 cm2/ Vs |
460-650 cm2/ Vs |
Electron saturation velocity |
1.5х107cm/s |
2.7х107cm/s |
Capacitance |
Low |
High |
Relative dielectric constant |
8.9 |
9.8 |
Crucial electric field |
3.3 MV/cm |
2.0 MV/cm |
Thermal conductivity |
1.3 W/cm K |
3.3-4.9 W/cm K |
Melting point |
>2500 K |
2827 K |
Application area |
High performance, high frequency systems |
High power, low frequency systems |
Applications of GaN Technology
Field |
Advantage |
Application Area |
Consumer Electronics |
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Smartphone chargers, smart speakers, gaming devices, Laptop adaptors, and portable electronics |
Data centers and 5G |
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Base station, edge computing systems |
Automotive |
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Onboard chargers, DC-DC converters, traction inverters, wireless power transfer |
Renewable Energy |
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String inverters and micro inverters |
Other Industries |
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Avionics and aerospace systems, medical devices, motor drives |
GaN Technology Advancements
The future of power electronics is in wide-bandgap material. Among wide-bandgap materials, GaN is superior in several aspects. Cutting-edge research is ongoing to see how GaN technology can support further advancements. Several devices have been developed, such as GaN FETS with integrated drivers, GaN fast chargers, GaN LEDs, and GaN on Silicon devices.
With the developments in GaN technology, high-voltage systems will continue to become safer and more reliable. Cadence’s design and analysis software can help you design power semiconductor transistors based on GaN technology.
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