Design of Class F PAs to Optimize Gain, Efficiency, and Stability
This white paper explores the design of PAs employing Cree GaN HEMTs to maximize power-added efficiency (PAE) by optimizing source and load pull at both fundamental and harmonic frequencies.
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This white paper explores the design of power amplifiers (PAs) employing Cree gallium nitride (GaN) high-electron-mobility transistor (HEMTs) to maximize power-added efficiency (PAE) by optimizing source and load pull at both fundamental and harmonic frequencies.