GaN/SI Microwave Process for 5G High-Power and Low-Noise Applications

This presentation will describe the OMMIC GaN solution for microwave and mmWave PAs. OMMIC has developed a 100-nm and a 60-nm gate length GaN on Si process engineered to reduce traps in the process as much as possible and enable high RF performance. The OMMIC D01GH and D006GH are especially suitable for PAs, robust low-noise amplifiers (LNAs), and front-end multifunction chips, from the Ku to the V or W band. Based on available design kits that include electro-thermal models and a full EM environment, various state-of-the-art PAs and a T/R chip for 5G applications will be presented.

Presented by: Julien Poulain, OMMIC https://www.ommic.com