Designing a Broadband GaN Power Amplifier Covering 400-3000MHz For Saturated Applications
This presentation demonstrates a design approach for a broadband saturated amplifier used in continuous wave (CW) saturated mode. In particular, the design uses a 25W discrete gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) and is required to provide a minimum of 42dBm output power at 40% drain efficiency over a fractional bandwidth of 153% using planar matching. An integrated co-simulation approach incorporating load pull for optimal impedance extraction, network synthesis, and electromagnetic (EM) analysis is employed that utilizes a methodology developed with the Cadence® AWR Design Environment® platform to produce a first-pass reference design. The design flow demonstrated uses the device nonlinear GaN HEMT model, ATC capacitor models, and AWR® Microwave Office® circuit design software, including EM analysis and layout.
Presented by: Jack Brunning, RF Power Designer, Ampleon