MMIC PA Design for 28 GHz 5G Applications Using UMS GH15 Gan-on-SiC

Advanced semiconductor technology plays an important role in evolving RF and microwave applications for 5G and satellite communications (Satcom) where the next generation of systems is moving towards millimeter-wave (mmWave) frequencies. Support of design flows and model availability for these semiconductor technologies is critical to designers for successful product development. In response, EDA software vendors offering MMIC and RFIC design solutions must work closely with leading foundries to ensure their products provide increased integration and higher performance while lowering cost and size requirements. This talk begins by introducing the United Monolithic Semiconductors (UMS) foundry and its processes, followed by highlights of techniques supporting device modeling of III-V wide bandgap semiconductor technology, specifically the UMS GH25 (0.25 µm gate length) GaN on SiC process for mmWave PAs targeting new communication and defense systems. Model accuracy is validated through simulation and measurements of multiple designs that were developed using the GH25 process design kit (PDK), serving as a development framework that will guide future work in support of evolving process node technologies like the GH15 0.15 µm GaN on SiC process currently in the qualification phase. Processes such as this are well suited for 5G applications, as demonstrated by a 10 W Ka-Band (29.5 to 36 GHz) PA and a 2 W front-end module (24 to 30 GHz) that integrate the GaN on SiC PA with other RF functions implemented with a GaAs process.

Presented by: David Vye, Cadence