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AWR Software for the Design of a High-Efficiency Broadband GaN HEMT Doherty Amplifier for Cellular Transmitters Cadence is a pivotal leader in electronic design and computational expertise, using its Intelligent System Design strategy to turn design concepts into reality. Cadence customers are the world's most creative and innovative companies, delivering extraordinary electronic products from chips to boards to systems for the most dynamic market applications. www.cadence.com © 2020 Cadence Design Systems, Inc. All rights reserved worldwide. Cadence, the Cadence logo, and the other Cadence marks found at www.cadence.com/go/trademarks are trademarks or registered trademarks of Cadence Design Systems, Inc. All other trademarks are the property of their respective owners. 14265 05/20 DB/SA/AN-GEN-HEMT/PDF Conclusion Next-generation 4G/5G telecommunication systems require new power amplifier architectures that can operate with high efficiency over a wide frequency range to provide multiband and multi-standard concurrent operation. This application note has presented an innovative Doherty amplifier design using AWR Microwave Office circuit design software that leveraged 200W high-efficiency broadband 1.8-2.7GHz GaN HEMT technology to achieve average efficiencies of 50-60 percent for output powers up to 100W that significantly reduced the cost, size, and power consumption of the transmitters. References 1. K. Bathich, A. Z. Markos, and G. Boeck, "A wideband GaN Doherty amplifier with 35% fractional bandwidth," Proc. 40th Europ. Microwave Conf., pp. 1006-1009, 2010. 2. K. Bathich, D. Gruner, and G. Boeck, "Analysis and design of dual-band GaN HEMT based Doherty amplifier," Proc. 6th Europ. Microwave Integrated Circuits Conf., pp. 248-251, 2011. 3. G. Sun and R. H. Jansen, "Broadband Doherty power amplifier via real frequency technique," IEEE Trans. Microwave Theory Tech., vol. MTT-60, pp. 99-111, Jan. 2012. 4. D. Y. Wu, J. Annes, M. Bokatius, P. Hart, E. Krvavac, and G. Tucker, "A 350 W, 790-to-960 MHz wideband LDMOS Doherty amplifier using a modified combining scheme," 2014 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1-4. 5. N. Yoshimura, H. Umeta, N. Watanabe, H. Deguchi, and N. Ui, "A 2.5-2.7GHz broadband 40W GaN HEMT Doherty amplifier with higher than 45% drain efficiency for multi-band application," 2012 IEEE Radio and Wireless Symp. Dig., pp. 53-56. 6. C. Monzon, "A small dual-frequency transformer in two sections," IEEE Trans. Microwave Theory Tech., vol. MTT-51, pp. 1157-1161, Apr. 2003. 7. A. Grebennikov, RF and Microwave Power Amplifier Design, 2nd edition, McGraw-Hill, 2015. 8. D. Y. Wu, F. Mkadem, and S. Boumaiza, "Design of broadband and highly efficient 45W GaN power amplifier via simplified real frequency technique," 2010 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1090-1093. 9. L. F. Cygan, "A high efficiency linear power amplifier for portable communications applications," 2005 IEEE Compound Semiconductor Integrated Circuit Symp. Dig., pp. 153-157. 10. G. Ahn, M. Kim, H. Park, S. Jung, J. Van, H. Cho, S. Kwon, J. Jeong, K. Lim, J. Y. Kim, S. C. Song, C. Park, and Y. Yang, "Design of a high-efficiency and high-power inverted Doherty Amplifier," IEEE Trans. Microwave Theory Tech., vol. MTT-55, pp. 1105-1111, June 2007. 11. A. Grebennikov, "Multiband Doherty amplifiers for wireless applications," High Frequency Electronics, vol. 13, pp. 30-46, May 2014. Acknowledgment Special thanks to James Wong, Andrei Grebennikov, Naoki Watanabe, and Eiji Mochida of Sumitomo Electric for their technical article "200-W High-Efficiency Broadband 1.8-2.7GHz GaN HEMT Doherty Amplifiers for New Generation Cellular Transmitters," which inspired the creation of this application note.