RF Electronics Chapter 2: Computer Simulation Page 19
2022, C. J. Kikkert, James Cook University, ISBN 978-0-6486803-9-0.
transistor in a circuit diagram. Selecting the device and then selecting properties opens
up the properties window. Select 2
nd
opens up the secondary parameters window as shown
in figure 2.20.
Equivalent Circuit (Vertical)
Figure 2.19. Circuit diagram of the Gummel-Poon Transistor model From AWR DE.
Figure 2.20. Parameters of a BC546 Gummel-Poon transistor model.
Using an existing transistor as a starting point or the Gummer-Poon model available at
Circuit Elements Nonlinear BJT GBJT, the model for another transistor can be
produced by editing the secondary parameters and then saving that with a new name.
For some transistors, instead of the device parameters of figure 2.20, a SPICE netlist,
imported as a data file, is included in the AWR device libraries from the web site. As an
example a BFP720 transistor SPICE file can be used by selecting Elements Libraries
*AWR web site Parts by Type Nonlinear Infineon RF Bipolar Transistors
Ultra Low Noise SiGe:C Transistors up to 12 GHz. That transistor is used in figure
2.25. The netlist for the BFP720 transistor is the SPICE based Gummel-Poon model
realisation:
RF Electronics: Design and Simulation
19 www.cadence.com/go/awr
