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RF Electronics: Design and Simulation

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RF Electronics Chapter 8: Amplifiers: Stability, Noise and Gain Page 285 2022, C. J. Kikkert, James Cook University, ISBN 978-0-6486803-9-0. performance, transducer gain and Output 1 dB compression (OP 1db ) and third order intercept (OIP3) power levels. The simulation models for the MMIC can be obtained from Infineon [10], or from within AWR DE by selecting Elements Libraries * AWR web site Parts by Vendor Infineon Data MMIC General Purpose MMICs and FM Radio LNAs BGB707L7ESD. The element can then be placed in a circuit as shown in figure 8.7. The MMIC requires external coupling capacitors and biasing inductors. These are normally realised using biasing Tees. By incorporating those in the schematic, the effect to these biasing networks on the stability and amplifier performance can be investigated. For a 6 mA supply current, the best amplifier stability occurs when coupling capacitors C1 = 2 nF. When the capacitance is increased, the input stability circle becomes slightly closer to the centre of the Smith Chart, but the amplifier remains stable when matched to a 50 Ω source and load. A biasing inductances of 1 H, result in a low corner frequency of 13.5 MHz, which is suitable for most applications. However, an input biasing inductance of 10 H results in a slightly better stability. As a result, the values of C1 = C4 = 2 nF and L1 = L2 = 10 H are used in this example. Capacitors C2 and C3 are not required in the hardware but mimic the AC impedance at the power supply and the bias output (pin2) of the MMIC. Figure 8.7. BGB707 model used in a circuit schematic. The model used is a linear model based on S parameter and noise measurements made at different supply voltages and currents. By double clicking on the voltage or current value, different values can be selected. Figure 8.8. BGB707 MMIC gain and NF performance. Figure 8.8 shows the different gain and NF values for a 3 V supply voltage and with different supply currents. Below 50 MHz the NF rises. That is due to the effect of the RF Electronics: Design and Simulation 285 www.cadence.com/go/awr

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